Pressure and temperature sensor

摘要

The sensor has integrated piezoresistive elements and at least two electrically conducting layers (2,3) at different depths below the semiconducting surface, each with at least one electrical contact (10-12). The electrically conducting layers are formed by regions of higher doping material concentration with a lower concentration region between them. Independent claims are also included for the following: a method of manufacturing a microsensor and uses of a microsensor for hardness measurements, for measuring thermal capacity and conductivity, for material processing involving removing material and as a test tip for a raster force microscope.