发明名称 Semiconductor memory device enabling direct current voltage test in package status
摘要 A semiconductor memory device for a package-state voltage test has a plurality of bonding pads that are electrically connected to an external device in a package state, at least one internal DC voltage generator, at least one switch connected between one of the bonding pads and the internal DC voltage generator. The switch is on during a test mode and is off during a normal mode. The switch controller is connected between at least two of the plurality of bonding pads and serves to control the switch in response to an external switching signal in the test mode. Because of this design, a number of DC voltage tests can be performed without increasing chip size since a general control pad also serves as a DC voltage test pad.
申请公布号 US6298001(B1) 申请公布日期 2001.10.02
申请号 US19960636428 申请日期 1996.04.23
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE SEUNG-HUN;KIM TAE-JIN
分类号 G01R31/26;G01R31/28;G11C29/00;G11C29/48;G11C29/50;G11C29/56;H01L21/66;H01L27/10;(IPC1-7):G11C17/00;G11C14/00 主分类号 G01R31/26
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