发明名称 TREATMENT METHOD FOR SEMICONDUCTOR MATERIAL OR THE LIKE
摘要 PROBLEM TO BE SOLVED: To provide a treatment method for semiconductor materials or the like capable of further effectively removing the impurities sticking to the surfaces of media to be treated and completely removing even the impurities intruding into surface grooves known as trenches and confined by air. SOLUTION: The media W to be treated are housed in a hermetically closed process chamber 1 and, while the treating liquid in the chamber is boiled under reduced pressure during the water washing treatment by the treating liquid sent into the chamber from its bottom, the water washing treatment is executed, by which the impurities sticking to the surface of the media W to be treated are effectively removed and further, even the impurities in the surface grooves 6, etc., known as the trenches are effectively flushed away and are completely removed.
申请公布号 JP2001269634(A) 申请公布日期 2001.10.02
申请号 JP20000086567 申请日期 2000.03.27
申请人 MESAKI TAMOTSU;WATABE HIROSHI;YAMAMOTO HIROYUKI 发明人 MESAKI TAMOTSU
分类号 B08B3/10;C23C16/56;H01L21/304;H01L21/306;(IPC1-7):B08B3/10 主分类号 B08B3/10
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