发明名称 Reference layer structure in a magnetic storage cell
摘要 A magnetic storage cell includes an active layer and a reference layer which is structured to minimize disruptions to magnetization in its active layer. The reference layer is structured so that a pair of its opposing edges overlap a pair of corresponding edges of the active layer. This may be used minimize the effects of demagnetization fields on the active layer. In addition, the reference layer may be thinned at its opposing edges to control the effects of coupling fields on the active layer and balance the demagnetization field.
申请公布号 US6297983(B1) 申请公布日期 2001.10.02
申请号 US20000514961 申请日期 2000.02.29
申请人 HEWLETT-PACKARD COMPANY 发明人 BHATTACHARYYA MANOJ
分类号 G11C11/14;G11C11/15;G11C11/16;H01F10/08;H01L21/8246;H01L27/105;H01L43/08;(IPC1-7):G11C7/02 主分类号 G11C11/14
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