| 发明名称 |
Method of forming conductive film and capacitor |
| 摘要 |
An SrRuO3 film as the lower electrode and upper electrode of a capacitor is formed by CVD using a gas mixture of Sr(THD)2 and Ru(THD)3 as source gases. A BaxSr1-xRuO3 film is used as a capacitor insulating film.
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| 申请公布号 |
US6297122(B1) |
申请公布日期 |
2001.10.02 |
| 申请号 |
US19990408837 |
申请日期 |
1999.09.30 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
EGUCHI KAZUHIRO;AOYAMA TOMONORI |
| 分类号 |
H01L27/10;C23C16/40;H01L21/02;H01L21/28;H01L21/285;H01L21/8242;H01L27/108;(IPC1-7):H01L21/20 |
主分类号 |
H01L27/10 |
| 代理机构 |
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代理人 |
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