| 摘要 |
A method of manufacturing a semiconductor device having a wiring layer with an air bridge construction includes the steps of forming a lower layer metal interconnect, depositing an interlayer insulation film, depositing a first and a second insulation film, patterning the second insulation film and of etching the first insulation film and the interlayer insulation film using the second insulation film as a mask so as to form a post opening part and a via hole to connect an upper layer metal interconnect with the lower layer metal interconnect, depositing a third insulation film over the entire surface, etching back so as to leave the third insulation film in a side wall of the post opening part and fill the via hole with the third insulation film, depositing a fourth insulation film over the entire surface of the structure, then removing the fourth insulation film until the via hole is exposed, and then removing the third insulation film inside the via hole, filling the via hole with a metal, and then flattening the entire surface of the structure, forming a metal film over the entire surface of the flattened structure and further forming a fifth insulation film thereon, which is then patterned, removing the metal film using the patterned fifth insulation film as a mask so as to form the upper layer metal interconnect, and etching the interlayer insulation film so as to form an air bridge interconnect.
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