发明名称 |
Method to free control tunneling oxide thickness on poly tip of flash |
摘要 |
A method of fabricating a floating gate/word line device, comprising the following steps. A semiconductor structure is provided. A floating gate portion is formed over the semiconductor structure. The floating gate portion having side walls and a top surface. A poly-oxide portion is formed over the top surface of the floating gate. An interpoly oxide layer is formed over the semiconductor structure, the poly-oxide portion and the poly-oxide portion. The interpoly oxide layer having an initial thickness and includes: a word line region portion over at least a portion of the semiconductor structure adjacent the floating gate portion; side wall area portions over the floating gate portion side walls; and a top portion over the poly-oxide portion. The initial thickness of the top portion of the interpoly oxide layer is reduced to a second thickness without reducing the initial thickness of the interpoly oxide word line region portion or an appreciable portion of the interpoly oxide side wall area portion. A polysilicon layer is formed over the interpoly oxide layer. The structure is patterned to form a floating gate/word line device.
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申请公布号 |
US6297099(B1) |
申请公布日期 |
2001.10.02 |
申请号 |
US20010765045 |
申请日期 |
2001.01.19 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY |
发明人 |
HSIEH CHIA-TA;KUO DI-SON;YEH JACK;LIN CHRONG JUNG;CHU WEN-TING;CHANG CHUNG-LI |
分类号 |
H01L21/28;H01L29/423;(IPC1-7):H01L21/824 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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