发明名称 Method of forming a surface implant region on a ROM cell using a PLDD implant
摘要 The invention provides a method for forming a ROM cell surface implant region using a PLDD implant. A semiconductor structure is provided comprising a substrate having isolation structures thereon, which separate and electrically isolating a first area having a P-well formed in the substrate and a gate over the substrate, a second area having a N-well formed in the substrate and a gate over the substrate, and a third area having P-well and buried N+ regions formed in the substrate with second isolation structures overlying the buried N+ regions. A photoresist mask is formed exposing the first area, and impurity ions are implanted to form n-type lightly doped source and drain regions. The photoresist mask is removed and a new (PLDD/ROM) photoresist mask is formed exposing the second area and the third area. Impurity ions are implanted to simultaneously form p-type lightly doped source and drain regions and a ROM cell surface implant region region. The PLDD/ROM photoresist mask is then removed.
申请公布号 US6297102(B1) 申请公布日期 2001.10.02
申请号 US19990409874 申请日期 1999.10.01
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY 发明人 YOU JYH-CHENG;WU LIN-JUNE
分类号 H01L21/8238;H01L27/118;(IPC1-7):H01L21/823 主分类号 H01L21/8238
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