发明名称 |
Air-bridge integration scheme for reducing interconnect delay |
摘要 |
Air-bridges are formed at controlled lateral separations using the extremely high HF etch rate of a gap-fill spin-on-glass such as uncured hydrogen silsequioxane (HSQ) in combination with other dielectrics having a much slower etch rate in HF. The advantages of an air-bridge system with controlled lateral separations include providing an interconnect isolation dielectric which meets all requirements for sub-0.5 micron technologies and providing a device with reduced reliability problems.
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申请公布号 |
US6297125(B1) |
申请公布日期 |
2001.10.02 |
申请号 |
US19990233252 |
申请日期 |
1999.01.19 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
NAG SOMNATH S.;CHATTERJEE AMITAVA;DIXIT GIRISH A. |
分类号 |
H01L21/768;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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