发明名称 |
Recessed, sidewall-sealed and sandwiched poly-buffered LOCOS isolation methods |
摘要 |
This is a method for forming a recessed LOCOS isolation region, which includes the steps of forming a first silicon nitride layer between the pad oxide layer and a polysilicon buffer layer and a second nitride layer over the polysilicon buffer layer. In addition, the method for forming LOCOS isolation regions can include the additional steps of forming a sidewall seal around the perimeter of the active moat regions prior to the field oxidation step. The resulting field oxide isolation regions have provided a low-profile recessed field oxide with reduced oxide encroachment into the active moat region.
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申请公布号 |
US6297130(B1) |
申请公布日期 |
2001.10.02 |
申请号 |
US19930113887 |
申请日期 |
1993.08.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
RAO KALIPATNAM VIVEK |
分类号 |
H01L21/32;(IPC1-7):H01L21/762 |
主分类号 |
H01L21/32 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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