发明名称
摘要 <p>A conductor line material is provided which has an extremely low electric resistance such as 10 mu OMEGA xcm or less, and in preferred embodiments, about 5 mu OMEGA xcm, which causes no defect such as hillocks and pinholes even at high temperatures, and which easily forms strong insulation films by anodic oxidation. An Al-based conductor line material comprising an alloy whose composition formula is substantially expressed by Alx(MyN1-y)1-x, where M represents at least one element selected from a group consisting of rare-earth elements, N represents at least one element selected from a group consisting of Nb, Zr and Ta, x is between 98 and 99.5 atomic percent, and y is a number between 0.1 and 0.9, wherein an intermetallic compound of Al with said element represented by M or N is deposited in the matrix by subsequent heat treatment. The same object may be achieved by an alloy of Al to which 0.5-2.0 atomic percent Nb is added. The temperature of heat treatment in both cases is preferably in a range between 250 and 450 DEG C.</p>
申请公布号 JP3213196(B2) 申请公布日期 2001.10.02
申请号 JP19950048861 申请日期 1995.03.08
申请人 发明人
分类号 H01L23/52;G02F1/1343;G02F1/1362;H01L21/3205;H01L21/336;H01L23/532;H01L29/49;H01L29/786;(IPC1-7):H01L21/320 主分类号 H01L23/52
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