发明名称
摘要 <p>PROBLEM TO BE SOLVED: To provide a heat treatment device of a silicon single crystal wafer that can efficiently transfer one group of a plurality of stacked wafers, and at the same time can suppress slip. SOLUTION: In a heat treatment device being used for the stack annealing method, a support part for preventing the drop of a wafer is erected in a tool consisting of a disk or a ring-shaped disk for supporting one group of wafers 7, at least one pin-shaped support part or an arc-shaped support part is erected, for example, at the outer-periphery part of the tool, and at the same time the heat content of the drop prevention part is reduced, thus efficiently transferring one group of the wafers 7, and at the same time suppress of a slip is made possible.</p>
申请公布号 JP3214558(B2) 申请公布日期 2001.10.02
申请号 JP19980315857 申请日期 1998.11.06
申请人 发明人
分类号 H01L21/324;H01L21/22;H01L21/66;H01L21/68;H01L21/683;(IPC1-7):H01L21/324 主分类号 H01L21/324
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