| 摘要 |
A semiconductor fabrication control monitor includes a first conducting film having a first area, a second area, a third area and a fourth area mutually connected, a first electrode, a second electrode, a third electrode and a fourth electrode all formed on a semiconductor substrate. The first electrode is formed from a second conducting film formed above the first area with an insulating film sandwiched therebetween. The second electrode is formed from the second conducting film formed above the second area with the insulating film sandwiched therebetween. The third electrode is formed from the second conducting film formed above and in direct contact with the third area. The fourth electrode is formed from the second conducting film formed above and in direct contact with the fourth area. The first electrode and the second electrode are mutually connected through a connecting part of the second conducting film, and are electrically connected to the first conducting film.
|
