| 摘要 |
PROBLEM TO BE SOLVED: To provide a sputtering target for ITO film deposition, with which micro arcing at sputtering is suppressed and nodules occurring at the surface of the target is decreased and a stable sputtering operation is carried out under prescribed conditions over the entire life of the target. SOLUTION: In the high density ITO sintered sputtering target, relative density is >=99.8% and the number of pores of >=2 μm in the polished surface of the sintering target is <=5 pieces/mm2. This sputtering target can be manufactured by subjecting a powder mixture of In2O3 and SnO2 to heat treatment in air at >=1,150 deg.C, pulverization, and sintering in an oxygen atmosphere at >=1,530 deg.C. |
