| 发明名称 |
METHOD FOR PRODUCING EPITAXIAL STRAIN LATTICE FILM OF OXIDE |
| 摘要 |
PROBLEM TO BE SOLVED: To simultaneously overcome such a problem as film damage by oxygen negative ion irradiation specific to the time of oxide sputtering and such a problem as relaxation of strain in film formation and removal of strain in a method for forming an epitaxial strain lattice film of oxide. SOLUTION: An RF electric power is applied to a substrate holder while preventing damage of a strain lattice film to be formed by an oxygen negative ion and an epitaxial strain lattice having excellent crystallizability is formed by irradiation with a positive ion having a proper energy. |
| 申请公布号 |
JP2001270795(A) |
申请公布日期 |
2001.10.02 |
| 申请号 |
JP20000089191 |
申请日期 |
2000.03.28 |
| 申请人 |
TOSHIBA CORP |
发明人 |
KAWAKUBO TAKASHI;YASUMOTO YASUAKI;YANASE NAOKO;ABE KAZUHIDE |
| 分类号 |
C30B23/08;C23C14/00;C23C14/08;C23C14/34;C23C14/35;C30B23/02;C30B29/32;H01L21/02;H01L21/203;H01L21/31;H01L21/314;H01L21/316;H01L21/8242;H01L27/10;H01L27/108 |
主分类号 |
C30B23/08 |
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