| 摘要 |
A method for forming a transistor comprises the steps of: forming a gate stack on the surface of a semiconductor substrate; implanting a first dose of an impurity into the substrate at a sufficient energy to penetrate at least a portion of the gate stack to provide a portion of the impurity on the first and second sides of the gate stack, and a portion of the impurity under the gate stack; and forming source/drain regions on the first and second sides of the gate stack. The implant may be at an angle normal to the surface of the substrate at an energy sufficient such that the impurity penetrates the gate stack to reach the channel region. Alternatively, a pair of angled implants at an angle relative to a line normal to the surface of the substrate may be used.
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