| 摘要 |
1,028,393. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE. Feb. 17, 1964 [March 13, 1963], No. 6570/64. Heading H1K. In a process for the production of a semiconductor component, one face of a monocrystalline body of semi-conductor material of one conductivity type is stepped so as to provide the face with a plateau-like portion, metal containing doping material is applied to the top of the plateau-like portion in the form of a metal foil of such extent that it does not overlap the perimeter of the top and that the shortest distance of the edge of the foil from the perimeter is nowhere substantially greater than the thickness of the foil, and the metal containing doping material is then alloyed-in to the top of the plateau-like portion so that a zone of opposite conductivity type is produced in the body, the zone extending completely across and being included completely within the plateaulike portion so that the PN-junction between the zone and the rest of the body is substantially planar. The plateau-like portion may stand proud of the rest of the face of the semi-conductor body, or it may be formed by etching or mechanically working a groove in the face. In the production of a transistor a number of concentric annular plateau-like portions may be formed. The semi-conductor material may be germanium or silicon, and the foil may be made of aluminium or gold and antimony. |
