| 摘要 |
PURPOSE: A method for comprising an improved pre-gate clean process is provided to exhibit a wafer's surface roughness of 1.0 ANGSTROM rms, substantially higher than the initial roughness. CONSTITUTION: The process comprising the steps of providing a silicon wafer; treating the wafer with ozonated water, such that an oxide forms on the wafer surface; and performing an etch of the treated wafer to substantially remove from the wafer surface at least one impurity selected from particles, organic materials, and metals. Here, the ozonated water comprises deionized water and 5 to 20 ppm ozone, and the etch is performed with an SC1 solution. Also, an HF rinse of the wafer is performed prior to the ozonated water treatment, and the process is performed in the absence of an HF rinse of the wafer. The surface roughness of the wafer after the etch is performed is the same as the roughness of the wafer prior to the treatment with the ozonated water.
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