MAGNETIC RESISTANCE EFFECT ELEMENT AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve the magnetic resistance effect of a magnetic resistance effect element due to materials developing a spin tunnel phenomenon with a grain boundary as a barrier, in the multi-crystal thin film of a manganese oxide film having a crystal structure such as a perovskite structure being strong correlation electronic materials. SOLUTION: This magnetic resistance effect element is provided with a substrate, the strong correlation electronic materials of a multi-crystal film formed on the substrate, and grain boundary materials existing in the crystal grains of the strong correlation electronic materials. The grabs boundary materials are provided with the reaction product of substances included in the substrate and materials included in the strong correlation electronic materials.