发明名称 |
DEVICE FOR PRODUCING SEMICONDUCTOR |
摘要 |
PROBLEM TO BE SOLVED: To enhance controllability of temperature in the central zone of a heater. SOLUTION: In a device for producing a semiconductor where a substrate is treated while being held horizontally, thickness of a thermal insulation layer 2 provided on the outside of a heater 1 for heating the substrate is differentiated in the central zone b of the heater 1 and at other parts thereof.
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申请公布号 |
JP2001267250(A) |
申请公布日期 |
2001.09.28 |
申请号 |
JP20000073455 |
申请日期 |
2000.03.16 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC |
发明人 |
KASATSUGU KATSUNAO;SHIRATORI WAKAKO;OTA TAKEJI;ISHIKAWA KENJI;MIYATA TOSHIMITSU |
分类号 |
H01L21/205;H01L21/324;(IPC1-7):H01L21/205 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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