发明名称 DEVICE FOR PRODUCING SEMICONDUCTOR
摘要 PROBLEM TO BE SOLVED: To enhance controllability of temperature in the central zone of a heater. SOLUTION: In a device for producing a semiconductor where a substrate is treated while being held horizontally, thickness of a thermal insulation layer 2 provided on the outside of a heater 1 for heating the substrate is differentiated in the central zone b of the heater 1 and at other parts thereof.
申请公布号 JP2001267250(A) 申请公布日期 2001.09.28
申请号 JP20000073455 申请日期 2000.03.16
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 KASATSUGU KATSUNAO;SHIRATORI WAKAKO;OTA TAKEJI;ISHIKAWA KENJI;MIYATA TOSHIMITSU
分类号 H01L21/205;H01L21/324;(IPC1-7):H01L21/205 主分类号 H01L21/205
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