发明名称 |
METHOD FOR FORMING FINE PATTERNS AND PHOTOMASK |
摘要 |
<p>PROBLEM TO BE SOLVED: To correct the irregular size of completed exposed images caused by the light proximity effect. SOLUTION: The exposure step subjected to a photoresist film is a multiple exposure step. The conditions of exposure of one exposure step comprising the multiple exposure step are set in such a way that the larger the distance between patterns, the more enlarged the exposed image is. The conditions of exposure of the other exposure step are set in such a way that the larger the distance between patterns, the more reduced the exposed image is.</p> |
申请公布号 |
JP2001267197(A) |
申请公布日期 |
2001.09.28 |
申请号 |
JP20000070271 |
申请日期 |
2000.03.14 |
申请人 |
MATSUSHITA ELECTRIC IND CO LTD |
发明人 |
YAMASHITA KAZUHIRO |
分类号 |
G03F1/36;G03F1/68;G03F1/70;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 |
主分类号 |
G03F1/36 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|