发明名称 METHOD FOR FORMING FINE PATTERNS AND PHOTOMASK
摘要 <p>PROBLEM TO BE SOLVED: To correct the irregular size of completed exposed images caused by the light proximity effect. SOLUTION: The exposure step subjected to a photoresist film is a multiple exposure step. The conditions of exposure of one exposure step comprising the multiple exposure step are set in such a way that the larger the distance between patterns, the more enlarged the exposed image is. The conditions of exposure of the other exposure step are set in such a way that the larger the distance between patterns, the more reduced the exposed image is.</p>
申请公布号 JP2001267197(A) 申请公布日期 2001.09.28
申请号 JP20000070271 申请日期 2000.03.14
申请人 MATSUSHITA ELECTRIC IND CO LTD 发明人 YAMASHITA KAZUHIRO
分类号 G03F1/36;G03F1/68;G03F1/70;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 主分类号 G03F1/36
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