| 摘要 |
PROBLEM TO BE SOLVED: To provide the manufacturing method of an image sensor which can reduce a dark current generated on the surface of a photodiode region. SOLUTION: This manufacturing method of a CMOS image sensor includes a first step of providing a semiconductor structure body which includes a photodiode 47 formed on a semiconductor substrate 41 and peripheral elements, a second step of forming an insulating film 52 on the semiconductor structure body, a third step of forming a hydrogen-containing dielectric film 53 including hydrogen ions on the insulating film 52, a fourth step of removing a dangling bond by diffusing the hydrogen ions inside the hydrogen-containing dielectric layer to the surface of the photodiode, and a fifth step of removing the hydrogen-containing dielectric film.
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