| 摘要 |
PROBLEM TO BE SOLVED: To provide a film forming method having smaller desorption quantity of F and H for forming an insulating film, including silicon, oxygen and other components and whose dielectric constant is lower than that of silicon oxidized film, SiOF film and SiCHO film, for example. SOLUTION: A plasma processor, where a first electrode and a second electrode which are confronted each other in parallel, is installed in a vacuum vessal, different high frequency power sourced are connected to the electrodes, and a plasma is generated with the energy of power applied to both electrodes is used. A body to be processed, a semiconductor wafer, for example, is arranged on the first electrode. The frequency of high frequency power applied to the first electrode is set to 2 MHz to 9 MHz, and the frequency of high frequency power applied to the second electrode is set to not less than 50 MHz. A film forming processing is preformed on the wafer, and an insulating film is obtained.
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