| 摘要 |
PROBLEM TO BE SOLVED: To provide a field-effect power transistor and a power device which enable reduction in third harmonic distortion. SOLUTION: The field-effect power transistor 10a comprises a pulse-doped layer 16, a control electrode 18, a cap layer 20, ohmic electrodes 24a, 24b, high concentration semiconductor regions 22a, 22b and dopes semiconductor region 26. The cap layer 20 is composed of a III-V compound semiconductor between the pulse-doped layer 16 and the control electrode 18, the heavily-doped semiconductor region 22a electrically connects the electrode 24a to the pulse-doped layer 16, the high concentration semiconductor region 22b connects the electrode 24b to the pulse-doped layer 16, the doped semiconductor region 16 is provided in the cap layer 20, so as to electrically connect the semiconductor region 22a to the doped layer 16, the doped semiconductor region 26 has a carrier concentration lower than that of the semiconductor region 22a and has the same conductivity as that of the doped layer 16.
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