| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device, where a surface protective film having a good surface protection operation is formed instead of a multiple layer structure including a silicon nitride surface protective film, and to provide its manufacturing method. SOLUTION: A semiconductor device 25, where a surface protective film 23 constituted of a silicon oxide insulating film, is installed on a semiconductor substrate 16 and at least the surface area of the surface protection film 23 is improved by ion implantation 37 and the manufacturing method are arranged.
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