METHOD OF MANUFACTURING SEMICONDUCTOR

摘要

PROBLEM TO BE SOLVED: To prevent adhesion of a product on the side and the surface of a pattern, when a ferroelectric thin film formed on a metallic thin film is to be dry-etched. SOLUTION: An adhering product can be removed by immersing a substrate in H2O, whose temperature is 40 deg.C-90 deg.C after a ferroelectric film is etched, by using a mixed gas constituted of Ar, C2F6 and Cl2.