METHOD FOR GROWING BULK CRYSTAL OF COMPOUND SEMICONDUCTOR, AND METHOD FOR MANUFACTURING COMPOUND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To obtain a long bulk crystal by executing growth of a multielement bulk crystal continuously and stably when the multielement bulk crystal is formed by a zone melting regrowth method. SOLUTION: A multielement material supply layer having a composition substantially identical to that of a multielement bulk crystal being formed is formed by dissolving a mixture of multielement material completely and then quenching it. The multielement material supply layer is brought into contact with a melt where the multielement bulk crystal is deposited thus compensating for variation in the composition of the melt due to deposition of the multielement bulk crystal.