| 摘要 |
PROBLEM TO BE SOLVED: To provide a method including a step for depositing a silicon oxide layer on a substrate and a step for deposition a dielectric film on the substrate constituted of a step processing a dielectric layer with oxygen. SOLUTION: The layer of FSG which is deposited in HDP-CVD and whose fluorine content is 7% or above when it is compared in peak high ratio, is processed with oxygen plasma. Thus, a film is stabilized or the thin layer (<1,000 angstroms) of substance, such as silicon nitride is deposited on the FSG layer using low-pressure strike. Low pressure strike is performed by making a process gas flow, so that pressure in a chamber becomes the range of 5 to 100 millitorrs and turning on a bias voltage for time sufficient for establishing a weak plasma, which is capacitively connected. Thus, a source voltage is turned on, and the bias voltage is turned off.
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