| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory in which write operations can be performed similarly to a RAM without requiring erase operations and its write control method. SOLUTION: This device has a gate region 220 including a control gate 222 and an electric charge accumulating layer 226 held between a first insulation film 222 and a second insulation film 228 in which conditions of occurrence of current are different, a first diffusion region (S) 230, and a second diffusion region (D) 240. A control gate is connected to a (m)th word line (1<=m<=M), the first diffusion region (S) and the second diffusion region (S) are connected respectively to (n-1)th and n(1<=n<=N)th bit lines. When a first value is written, 0 is applied to the (n-1)th and (n)th bit lines, while 2V is applied to the (m)th word line. When a second value is written, V is applied to the (n-1)th and (n)th bit lines, while -V is applied to the (m)th word line.</p> |
