发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
<p>PROBLEM TO BE SOLVED: To improve the dimensional accuracy of a transferred pattern. SOLUTION: A prescribed pattern is transferred onto a semiconductor wafer by performing exposure by using a photomask 2 on which the most proximate light transmitting areas PA1 and PA2 in a pattern for forming a mask pattern are laid out in a direction in which the areas PA1 and PA2 are hardly affected by the aberration of the optical system of an aligner.</p> |
申请公布号 |
JP2001267208(A) |
申请公布日期 |
2001.09.28 |
申请号 |
JP20000072624 |
申请日期 |
2000.03.15 |
申请人 |
HITACHI LTD |
发明人 |
IMAI AKIRA;HAYANO KATSUYA;HASEGAWA NORIO |
分类号 |
G03F1/30;G03F1/32;G03F1/70;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/08 |
主分类号 |
G03F1/30 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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