| 摘要 |
PROBLEM TO BE SOLVED: To increase the area of an electrode by an uneven structure of an inner side face of a memory cell capacitor electrode section, without impairing the planarity of the surface. SOLUTION: An insulation film is formed by laminating insulation films of two different kinds. In the laminated insulation film, a capacity hole is formed through anisotropic dry etching. By selectively etching one kind of insulation film of the laminated insulation film, unevenness is formed on the inner side face of the capacitor hole. A capacitor is formed to the shape of the uneven structure of the hole, which increases the area of the capacitor and therefore increases the capacity of the capacitor. Since the capacitor is embedded in the interlayer insulation film, the difference in level between a memory cell section and a peripheral circuit section can be reduced markedly than in the case, in which the capacitor is formed on the interlayer insulation film. |
