| 摘要 |
PROBLEM TO BE SOLVED: To provide a group III nitride-based compound semiconductor having few through dislocations. SOLUTION: A substrate 1, a buffer layer 2, and a first group III nitride-based compound semiconductor (GaN:In) layer 31 doped with indium(In), are formed. Since the GaN:In layer 31 is doped with indium(In) which has a larger atomic radius than that of Ga which is the main constituent element, extended strain of the crystal caused by the deficiency of nitrogen atoms is compensated by the compressive strain, and a layer of extremely good crystallinity results. The layers are etched to form trench- shaped steps. The faces not etched are defined as upper faces, while side faces and bottom faces (lower step faces) of the steps where the substrate surface is exposed are formed. A second group III nitride-based compound semiconductor 32 is epitaxially grown by utilizing the side faces having good crystallinity and the upper faces of the steps for the nuclei under a condition capable of transverse epitaxial growth. The upper section of the parts of the group III nitride-based compound semiconductor 32 that bury the steps does not allow the through dislocations to propagate from the substrate 1 surface. |
