| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing a semiconductor device so improved as to enhance productivity and reliability in the formation of a fine pattern. SOLUTION: An organic antireflection film 3 containing a light absorbing dye is formed on semiconductor substrates 1, 2 and a resist pattern 4a is formed on the antireflection film 3. The light absorbing dye in the antireflection film 3 is sublimed and the substrates 1, 2 are etched using the resist pattern 4a. |
