| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for forming a high mobility semiconductor silicide film in which an epitaxial semiconductor silicide film can be formed easily without causing any aggregation even during high temperature annealing for enhancing crystallinity. SOLUTION: The method for forming a semiconductor silicide film comprises a step for forming aβ-FeSi2 epitaxial growth film 2 on a silicon substrate 1 in order to arrange the crystal orientation of the film, a step for forming a multilayer Si/Fe film 3 by deposition on theβ-FeSi2 epitaxial growth film 2, a step for forming an SiO2 cap layer 4 by deposition on the multilayer Si/Fe film 3 in order to suppress aggregation, and a step for forming aβ-FeSi2 epitaxial growth film 5 by annealing.</p> |
