| 摘要 |
PROBLEM TO BE SOLVED: To form a pattern very accurately and easily on a wafer along its crystal orientation. SOLUTION: An exposure system is equipped with a stage 11 set in a rotatable manner, an X-ray source 13 which irradiates a wafer 12 mounted on the stage 11 with an X-ray, and an X-ray detector 14 which detects the intensity of the diffracted ray of the X-ray beam. For instance, when a first pattern is formed on a wafer 12 where no target is provided, the crystal orientation of the wafer 12 is detected with the X-ray source 13 and X-ray detector 14 through an X-ray diffraction method, the wafer 12 can be positioned resting on the crystal orientation, so that a deviation (angular deviation) of the crystal orientation from a pattern can be reduced to an irreducible minimum. Moreover, as the intensity of a diffracted ray is detected, the detecting operation can be easily carried out or easily automated. |
