发明名称 SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device which can reduce restrictions on design and thermal noise generated in resistance elements in application to a reference voltage source circuit. SOLUTION: Emitter of each of pnp transistors Q11, Q12, Q21-Q27 is surrounded with a base electrode 7 and a collector electrode 8, to allow a current between the emitter and the base and a current between the base and the collector to flow in either direction around them, thereby reducing the resistances which are parasitic to the base and the collector, compared with those in prior art. As a result, earger currents can be flowed than those in prior art, even if pnp transistor groups GQ1, GQ2 operate nearly in ideal conditions, reducing the resistance of resistance elements connected to the pnp transistor groups GQ1, GQ2. Thus their areas and thermal noise generated from them can be reduced.
申请公布号 JP2001267327(A) 申请公布日期 2001.09.28
申请号 JP20000072774 申请日期 2000.03.15
申请人 NEC CORP 发明人 TAKIGUCHI TOMIO
分类号 H01L29/73;H01L21/331;H01L21/822;H01L21/8222;H01L27/04;H01L27/082;H01L29/423;H01L29/732;(IPC1-7):H01L21/331 主分类号 H01L29/73
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