| 摘要 |
PROBLEM TO BE SOLVED: To provide a ferroelectric memory in which the rewriting of information is not caused at the time of non-selection and a semiconductor memory provided with it. SOLUTION: This ferroelectric memory is provided with an FET 10 and three ferroelectric capacitors 11, 12 and 13. One side of electrodes of the ferroelectric capacitors 11, 12 and 13 are connected to the gate of the FET 10 and the other side of electrodes are connected to terminals VA, NB and NC respectively. Capacity values Ca, Cb and Cc of the ferroelectric capacitors 11, 12 and 13 have relation of Cc>Ca>Cb and Cc=Ca+Cb. Also, a capacity value Cb of the ferroelectric capacitor 12 is set to a capacity value Ct of agate capacitor of the FET 10 or less.
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