发明名称 NON-VOLATILE SEMICONDUCTOR MEMORY DEVICE AND SEMICONDUCTOR DISK DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide a non-volatile semiconductor memory device in which each bank can be externally controlled and to provide a semiconductor disk device in which the next write operation can be performed directly to a bank being made a ready state of a non-volatile semiconductor memory. SOLUTION: A write operation from a data register into a memory cell can be performed independently for each bank, and transfer of write data from the outside to a data register of each bank can be performed even when a write operation from a data register to a memory cell is being performed in the other bank.</p>
申请公布号 JP2001266579(A) 申请公布日期 2001.09.28
申请号 JP20010001590 申请日期 2001.01.09
申请人 HITACHI LTD;HITACHI DEVICE ENG CO LTD 发明人 KOBAYASHI NAOKI;SAEKI SHUNICHI;KURATA HIDEAKI
分类号 G11C16/02;G06F12/00;G06F12/06;(IPC1-7):G11C16/02 主分类号 G11C16/02
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