| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus where film forming speed, uniformity of film thickness in a substrate face and the uniformity of film thickness, between substrates which are laminated on upper/lower parts, can be improved. SOLUTION: A reaction pipe 2 is installed in a heater 20, and a boat 4 is arranged in the reaction pipe 2. Plural wafers 3 are vertically stacked on the boat 4. A nozzle 5 with gas jet ports 6 are made by adjusting them to a wafer pitch and a nozzle 7 which is formed into a U shape, to which a gas is introduced from one auxiliary nozzle 71 and in which gas jet ports 8 are made on the other auxiliary nozzle 72 by adjusting them to the wafer pitch are used. The nozzles 5 and 7 are fitted to an inlet adapter 9, and a raw gas is supplied to the wafer 3 in the horizontal direction. The raw gas is made to flow from a lower side through the nozzle 5 and is made to flow from an upper side through the nozzle 7 and gas is supplied to the wafers 3 in the horizontal direction. Thus, film formation rate, the uniformity of film thickness in a wafer face and uniformity of film thickness between the wafers 3 which are laminated on upper/lower parts are improved.
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