| 摘要 |
PROBLEM TO BE SOLVED: To suppress a recess generated in an end portion of a trench element isolation region to provide a MOS transistor stably without a hump. SOLUTION: This method of forming a trench element isolation region in a semiconductor substrate surface comprises the steps of forming a trench in the semiconductor substrate surface, depositing an insulating film to fill the trench and cover the top of the semiconductor substrate, subjecting part or whole of the insulating film to laser beam irradiation or shrink-fitting at high temperature by thermal treatment or the like and, after this shirink-fit of the unsulating film, removing the insulating film covering the top of the semiconductor substrate by chemical mechanical polishing and filling the insulating film in the trench. After filling the insulating film in the trench, alternatively, the method includes the steps of implanting impurity ions to the whole surface from the top of the semiconductor substrate and by heat treatment removing damage generated on the insulating film surface filled in the trench by the ion implantation.
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