| 摘要 |
PROBLEM TO BE SOLVED: To provide a multilayered dielectric stack having alternate layers of high-dielectric material and insertion material, which can be used in MOS transistor and an integrated circuit structure. SOLUTION: Integrated circuit(IC) structure for an IC containing the multilayered dielectric stack includes a) a first dielectric layer which contains first dielectric material and covers a semiconductor substrate, b) a second dielectric layer which contains a second dielectric material and covers the first dielectric layer, c) a third dielectric layer which contains the first dielectric material and covers the first and second dielectric layers, and d) an electrode which covers the dielectric stack.
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