| 摘要 |
PROBLEM TO BE SOLVED: To form a cylindrical storage electrode, having a structure where silicon projection hardly falls off from the upper face, in a semiconductor device having a capacitor. SOLUTION: A method of manufacturing the semiconductor device comprises a process of forming an undoped or a lightly-doped concentration amorphous silicon film 10 saliently on an insulation film 7, a process of selectively doping an impurity into the most upper face of the amorphous silicon film 10 to turn the most upper part of the amorphous silicon film 10 into a region of a heavily- doped impurity, a process of exposing the amorphous silicon film 10 to silicon compound gas and then annealing the silicon film 10 in a reduced atmosphere, to from semiglobular silicon grains 12 at a first concentration in the uppermost face of the silicon film 10 and at a second concentration, which is higher than the first one, in the side face of the silicon film 10, and a process of doping an impurity into the semi-globular silicon grains 12 and the amorphous silicon film 10. |
