| 摘要 |
PROBLEM TO BE SOLVED: To form a hole pattern having good shapes and diameters of several tens of nanometers by using electron beam lithography. SOLUTION: A method of forming a resist pattern includes a step of forming holes in a resist layer containing a positive electron beam resist by forming the resist layer on the surface of a substrate and developing the resist layer after the resist layer is irradiated with an electron beam. At the time of forming the holes meeting the relation of 40<=W<=70 (where, W is the means diameter (nm) of the holes), the emitting quantity DW of the electron beam is adjusted to meet the relation of 0.85×60/(W-20)<=DW/D80<=1.1×60/(W-20) (where, D80 is the optimum emitting quantity of the electron beam when the W is 80). |
