| 摘要 |
PROBLEM TO BE SOLVED: To accurately measure Id-Vg characteristic when using a pseudo MOSFET for evaluating an SOI substrate, and to minimize the influence over aging for obtaining a value with superior producibility. SOLUTION: When the Id-Vg characteristic of the SOI substrate are measured using a pseudo-MOSFET, an insulating film 16 with a thickness of 1 nm to 1μm is formed on the surface of an SOI thin film 13, and drain and source probes 17 and 18 are pierced to the insulating film for coming into direct contact with the SOI thin film. Or the insulating film with a thickness of 2 nm to 1μm is formed on the surface f the SOI thin film 13, a resist layer 29 is formed on the surface of the insulating film, the resist layer is used as a mask for etching the insulating film, metal is deposited onto the surface of the exposed SOI thin film for forming a pair of electrodes 34, and the electrodes are allowed to come into contact with the drain and source probes for measurement.
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