| 摘要 |
PROBLEM TO BE SOLVED: To provide a technology for allowing the production of oxide superconducting conductor with a high critical current density having a superior crystal orientation through a configuration for allowing an arbitrary control of material type, temperature, and oxygen partial pressure for each gas supply section. SOLUTION: The apparatus comprises a reactor 31 undergoing a CVD reaction which causes an oxide superconductiving layer to be piled up on a surface of a base material, a raw material gas supply means 54 for feeding a raw material gas to the reactor 31, a gas discharge means 80 for discharge a gas in the reactor, and a control means for controlling these components. The reactor 31 is divided into the base material introduction portion 34, a reaction and production chambers 35A, 35B, 35C, and the base material delivery portion 36. The base material passing hole 39 is formed on a partition wall for each of these divisions. Inside the reactor are formed the base material carrying region R passing through the base material introduction portion, a plurality of reaction production chambers, and the base material delivery portion 36. Each of the reaction production chambers arranged in series is configured to be independently temperature controllable.
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