| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of an oxide film for increasing grow the rate of an aluminum oxide film. SOLUTION: The manufacturing method of an aluminum oxide film used in a semiconductor is provided with a first step for supplying a semiconductor substrate and placing the semiconductor substrate in a chamber, a second step for simultaneously supplying aluminum source substance and ammonia gas into the chamber and adsorbing them with the semiconductor substrate, a third step for supplying nitrogen gas into the chamber or executing vacuum purge and discharging MTMA which does not react and by-products, a fourth step for supplying an oxygen source substance into the chamber and adsorbing it by the semiconductor substrate, and a fifth step for supplying nitrogen gas in to the chamber or executing vacuum purge and discharging an oxygen source which does not react and by-products.
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