发明名称 SEMICONDUCTOR MEMORY
摘要 PROBLEM TO BE SOLVED: To solve the problem that it is hard to arrange circuit blocks unnecessary to all pairs of bit lines without affecting the arrangement of bit lines. SOLUTION: A sense amplifier driver NSAD constituted of (n) channel transistors is arranged between a local data transfer gate LDQG and a sense amplifier NSA. A sense amplifier driver PSAD constituted of (p) channel transistors is arranged between a local data transfer gate LDQG and a sense amplifier PSA. The sense amplifier drivers NSAD and PSAD are arranged with a pitch larger than the pitch of bit lines. Therefore, the pitch of layout of sense amplifier drivers NSAD and PSAD and the local data transfer gate LDQG can be relaxed, and a design rule can be relaxed.
申请公布号 JP2001266569(A) 申请公布日期 2001.09.28
申请号 JP20000082594 申请日期 2000.03.23
申请人 TOSHIBA CORP 发明人 NAKANO HIROAKI
分类号 G11C11/401;G11C11/409;(IPC1-7):G11C11/401 主分类号 G11C11/401
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