| 摘要 |
PURPOSE: A method is provided to manufacture a spherical shaped Bi2Te3 thermoelectric material the composition and structure of which are uniform and fine respectively using gas atomization, and manufacture a thermoelectric semiconductor green compact having high strength and superior thermoelectric properties using sintering and hot metal forming such as hot forging, hot extrusion and hot isostatic pressing. CONSTITUTION: The method for manufacturing an alloy for a Bi2Te3 thermoelectric semiconductor comprises the steps of fine thermoelectric semiconductor powder in a rapid solidifying gas atomization in which basic materials of a n type composition alloy consisting of Bi2Te3, Sb2Te3 and Bi2Se3 and a p type composition alloy consisting of Bi2Te3, Sb2Te3 and Bi2Se3 are melted in a furnace, and then rapidly solidified using a cooling media of a high speed atmospheric gas and air; reducing the manufactured thermoelectric semiconductor powder; cold forming the powder reduced in the step at first axis, and x and y axes considering crystal orientation of the powder; pre-heating the cold green compact under vacuum and inert atmosphere of an ordinary amount of a nitrogen or argon gas; and hot forming the pre-heated green compact.
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