| 摘要 |
PROBLEM TO BE SOLVED: To decrease, cell area and increase ferroelectric capacitor area, without having to adopt a COP structure. SOLUTION: The device has a substrate 11, a diffusion region 15B, a layer insulation film 16 formed thereon, a hole 21, which is formed on the layer insulation film 16 and communicates with the diffusion region 15B, a lower electrode 23 which is formed inside the hole 21 and electrically connected to the diffusion region 15B, a ferroelectric film 24 formed on the lower electrode 23 and an upper electrode 25 formed on the ferroelectric film 24. A ferroelectric capacitor is constituted of the lower electrode 23, the ferroelectric film 24 and the upper electrode 25. |
