| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor wafer whose crystal orientation can be recognized reliably and easily in a step after grinding of its back. SOLUTION: When the semiconductor wafer 1 is subjected to dicing, a crystal orientation line groove 4 is formed with a distance (b) different from the street distance (a). The crystal orientation line groove 4 is provided in the peripheral part where no semiconductor chips are placed and in a position correlated with a notch 3 showing the crystal orientation. In this case, the crystal orientation line groove 4 is formed in parallel with the outermost street and in the position opposite to the notch 3, but this is not limitative. The semiconductor wafer 1 is subjected to dicing while it is placed on an adhesive tape 7 supported by a frame 6, and the crystal orientation line groove 4 is formed at the time of dicing. |
